Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University , Agri-Innovation Center, Iwate University
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University , Agri-Innovation Center, Iwate University
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University
登録日
2022-08-29
雑誌名
Micromachines
巻
12
号
6
ページ
599
発行年
2021-05-22
ISSN
2072666X
抄録
The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbon tetrafluoride (CF4) gas was used as the etching gas and injected into the vacuum chamber. The impedance was changed with time, and the coil voltage and current were changed to follow it. During the discharge, about 3 kW of power was applied. The electron temperature and plasma density were measured by the double probe method. The plasma density in the etching region was 1018–1019 m−3. The target current increased with t burst width. The etching rate of Ar discharge at burst width of 1000 µs was 0.005 µm/min. Adding CF4 into Ar, the etching rate became 0.05 µm/min, which was about 10 times higher. The etching rate increased with burst width.
Silicon wafer etching rate characteristics with burst width using 150 khz band high-power burst inductively coupled plasma
mm-v12n6p599
(2.97MB)
