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  1. 030 理工学 Science & engineering
  2. 学術雑誌掲載論文

Effect of pressure on the magnetic, transport, and thermal-transport properties of the electron-doped manganite CaMn_{1-x}Sb_{x}O_{3}

https://iwate-u.repo.nii.ac.jp/records/10097
https://iwate-u.repo.nii.ac.jp/records/10097
99e772ab-a59c-4cdc-b2a8-522b5ff5d6ff
名前 / ファイル ライセンス アクション
prb-v83i5p054437.pdf prb-v83i5p054437.pdf (1.2 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2011-11-10
タイトル
タイトル Effect of pressure on the magnetic, transport, and thermal-transport properties of the electron-doped manganite CaMn_{1-x}Sb_{x}O_{3}
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
著者 Murano, Yuh

× Murano, Yuh

Murano, Yuh

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Matsukawa, Michiaki

× Matsukawa, Michiaki

Matsukawa, Michiaki

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Ohuchi, Syuya

× Ohuchi, Syuya

Ohuchi, Syuya

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Kobayashi, Satoru

× Kobayashi, Satoru

Kobayashi, Satoru

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Nimori, Shigeki

× Nimori, Shigeki

Nimori, Shigeki

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Suryanarayanan, Ramanathan

× Suryanarayanan, Ramanathan

Suryanarayanan, Ramanathan

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Koyama, Keiichi

× Koyama, Keiichi

Koyama, Keiichi

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Kobayashi, Norio

× Kobayashi, Norio

Kobayashi, Norio

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著者(機関)
値 Department of Materials Science and Engineering, Iwate University, Present address: DOWA Electronics Materials Co., Ltd.
著者(機関)
値 Department of Materials Science and Engineering, Iwate University
著者(機関)
値 Department of Materials Science and Engineering, Iwate University
著者(機関)
値 Department of Materials Science and Engineering, Iwate University
著者(機関)
値 National Institute for Materials Science
著者(機関)
値 Laboratoire de Physico-Chimie de L’Etat Solide
著者(機関)
値 Graduate School of Science and Engineering, Kagoshima University
著者(機関)
値 Institute for Materials Research, Tohoku University
登録日
日付 2011-11-10
書誌情報 Physical Review B

巻 83, 号 5, p. 054437-1-054437-13, 発行日 2011-01-01
ISSN
収録物識別子タイプ ISSN
収録物識別子 1098-0121
Abstract
内容記述タイプ Other
内容記述 We have demonstrated the effect of hydrostatic pressure on magnetic and transport properties, and thermal-transport properties in the electron-doped manganite CaMn1-xSbxO3. The substitution of Sb5+ ion for Mn 4+ site of the parent matrix causes one-electron doping with the chemical formula CaMn1-2x4+Mnx3+Sbx5+O3 accompanied by a monotonous increase in unit-cell volume as a function of x. Upon increasing the doping level of Sb, the magnitudes of both electrical resistivity and negative Seebeck coefficient are suppressed at high temperatures, indicating the electron doping. Anomalous diamagnetic behaviors at x=0.05 and 0.08 are clearly observed in the field cooled dc magnetization. The effect of hydrostatic pressure on dc magnetization is in contrast to the chemical pressure effect due to Sb doping. The dynamical effect of ac magnetic susceptibility measurement points to the formation of the magnetically frustrated clusters such as FM clusters embedded in canted AFM matrix.
出版者
出版者 American Physical Society
権利
権利情報 (C) 2011 American Physical Society
DOI
関連タイプ isIdenticalTo
識別子タイプ DOI
関連識別子 10.1103/PhysRevB.83.054437
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
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