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Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process
https://iwate-u.repo.nii.ac.jp/records/10111
https://iwate-u.repo.nii.ac.jp/records/101117957d9f7-b68e-41cb-be22-e9a59f533799
| 名前 / ファイル | ライセンス | アクション |
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prb-v66i20p205309.pdf (123.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2012-01-10 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| 著者 |
ABE, Shuma
× ABE, Shuma
× INAOKA, Takeshi
× HASEGAWA, Masayuki
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| 著者(機関) | ||||||||||||
| 値 | Department of Materials Science and Technology, Faculty of Engineering, Iwate University, Present address:DNP Jyouhou Shisutemu Co. Ltd. |
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| 著者(機関) | ||||||||||||
| 値 | Department of Materials Science and Technology, Faculty of Engineering, Iwate University | |||||||||||
| 著者(機関) | ||||||||||||
| 値 | Department of Materials Science and Technology, Faculty of Engineering, Iwate University | |||||||||||
| 登録日 | ||||||||||||
| 日付 | 2012-01-10 | |||||||||||
| 書誌情報 |
Physical Review B 巻 66, 号 20, p. 205309-1-205309-8, 発行日 2002-01-01 |
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| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 1098-0121 | |||||||||||
| Abstract | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | Adsorption on a doped semiconductor surface often induces a gradual formation of a carrier-accumulation layer at the surface. Taking full account of a nonparabolic (NP) conduction-band dispersion of a narrow-gap semiconductor, such as InAs and InSb, we investigate the evolution of electron states at the surface in an accumulation-layer formation process. The NP conduction band is incorporated into a local-density-functional formalism. We compare the calculated results for the NP dispersion with those for the parabolic (P) dispersion with the band-edge effective mass. With increase in the accumulated carrier density NS, the accumulated carriers for the NP conduction band start to be more localized in closer vicinity to the surface than those for the P one. As the bottoms of a few lowest subbands drop below the Fermi level one after another with increase in NS, the nonparabolicity begins to have a great influence on the dispersion and the bottom of each of these subbands, particularly on those of the lowest subband. The present work provides a numerical basis for making a quantitative examination of surface electronic excitations in the accumulation-layer formation process. | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Physical Society | |||||||||||
| 権利 | ||||||||||||
| 権利情報 | (C) 2002 The American Physical Society | |||||||||||
| DOI | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | 10.1103/PhysRevB.66.205309 | |||||||||||
| 著者版フラグ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
