| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2021-12-13 |
| タイトル |
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タイトル |
Difference in gating and doping effects on the band gap in bilayer graphene |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
UCHIYAMA, Takaki
GOTO, Hidenori
AKIYOSHI, Hidehiko
EGUCHI, Ritsuko
NISHIKAWA, Takao
OSADA, Hiroshi
KUBOZONO, Yoshihiro
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| 著者(機関) |
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|
値 |
Research Institute for Interdisciplinary Science, Okayama University |
| 著者(機関) |
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値 |
Research Institute for Interdisciplinary Science, Okayama University |
| 著者(機関) |
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値 |
Research Institute for Interdisciplinary Science, Okayama University |
| 著者(機関) |
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値 |
Research Institute for Interdisciplinary Science, Okayama University |
| 著者(機関) |
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値 |
Hanamaki Satellite, Research Center for Industrial Science, Iwate University |
| 著者(機関) |
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値 |
Faculty of Science and Engineering, Iwate University |
| 著者(機関) |
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値 |
Research Institute for Interdisciplinary Science, Okayama University |
| 登録日 |
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日付 |
2021-12-13 |
| 書誌情報 |
Scientific Reports
巻 7,
p. 11322,
発行日 2017-09-12
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| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
20452322 |
| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate voltages are applied to each side of BLG. An alternative method to induce the electric field is electron and hole doping of each side of BLG using electron-transfer adsorbates. However, the generation of the band gap by carrier doping is still under investigation. Here, we determined whether the electron/hole doping can produce the electric field required to open the band gap by measuring the temperature dependence of conductivity for BLG placed between electron-donor self-assembled monolayers (SAMs) and electron-acceptor molecules. We found that some devices exhibited a band gap and others did not. The potentially irregular and variable structure of SAMs may affect the configuration of the electric field, yielding variable electronic properties. This study demonstrates the essential differences between gating and doping. |
| 出版者 |
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出版者 |
Springer Nature |
| 関係URI |
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識別子タイプ |
URI |
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関連識別子 |
https://www.nature.com/articles/s41598-017-11822-9 |
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関連名称 |
Difference in gating and doping effects on the band gap in bilayer graphene |
| 権利 |
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権利情報 |
© The Author(s) 2017 |
| 権利URI |
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権利情報 |
http://creativecommons.org/licenses/by/4.0/ |
| DOI |
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関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
info:doi/10.1038/s41598-017-11822-9 |
| 著者版フラグ |
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出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
sr-v7p11322 (2.2 MB)
