{"created":"2023-05-15T12:09:54.591868+00:00","id":15511,"links":{},"metadata":{"_buckets":{"deposit":"4942c5ab-06e3-406b-b98f-aaf63e0628cd"},"_deposit":{"created_by":19,"id":"15511","owners":[19],"pid":{"revision_id":0,"type":"depid","value":"15511"},"status":"published"},"_oai":{"id":"oai:iwate-u.repo.nii.ac.jp:00015511","sets":["1515:1519"]},"author_link":["93700","93701","93706","93703","93704","93705","93702"],"item_16_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-08-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"1276","bibliographicVolumeNumber":"14","bibliographic_titles":[{"bibliographic_title":"Materials"}]}]},"item_16_date_6":{"attribute_name":"登録日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-01-12"}]},"item_16_description_11":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization–voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (Pr), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, Pr had a value close to 0 in the dynamic measurement polarization–voltage (P–V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.","subitem_description_type":"Abstract"}]},"item_16_link_13":{"attribute_name":"抄録（URL）","attribute_value_mlt":[{"subitem_link_text":"Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors","subitem_link_url":"https://www.mdpi.com/1996-1944/14/5/1276"}]},"item_16_publisher_14":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"MDPI"}]},"item_16_relation_26":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.3390/ma14051276","subitem_relation_type_select":"DOI"}}]},"item_16_rights_18":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2021 by the authors."}]},"item_16_rights_19":{"attribute_name":"権利URI","attribute_value_mlt":[{"subitem_rights":"https://creativecommons.org/licenses/by/4.0/"}]},"item_16_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"19961944","subitem_source_identifier_type":"ISSN"}]},"item_16_text_4":{"attribute_name":"著者(機関)","attribute_value_mlt":[{"subitem_text_value":"Department of Creative Convergence Engineering, Hanbat National University"},{"subitem_text_value":"Department of Electronics Engineering, Hanbat National University"},{"subitem_text_value":"Department of Chemistry & Biological Sciences, Faculty of Science & Engineering, Iwate University"},{"subitem_text_value":"Department of Chemistry & Biological Sciences, Faculty of Science & Engineering, Iwate University"},{"subitem_text_value":"Department of Creative Convergence Engineering, Hanbat National University"},{"subitem_text_value":"Department of Electronics Engineering, Hanbat National University"},{"subitem_text_value":"Department of Creative Convergence Engineering, Hanbat National University"}]},"item_16_version_type_27":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"NOH, Eun-Kyung"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Boampong, Amos"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"KONNO, Yu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"SHIBASAKI, Yuji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"LEE, Jae-Hyun"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"CHOI, Yoonseuk"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"KIM, Min-Hoi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-01-12"}],"displaytype":"detail","filename":"materials-v14n5p1276.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"materials-v14n5p1276","url":"https://iwate-u.repo.nii.ac.jp/record/15511/files/materials-v14n5p1276.pdf"},"version_id":"58cf4eb2-dd56-4078-8672-41629744aafe"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ferroelectric","subitem_subject_scheme":"Other"},{"subitem_subject":"transistor","subitem_subject_scheme":"Other"},{"subitem_subject":"capacitor","subitem_subject_scheme":"Other"},{"subitem_subject":"buffer layer","subitem_subject_scheme":"Other"},{"subitem_subject":"capacitance","subitem_subject_scheme":"Other"},{"subitem_subject":"hysteresis","subitem_subject_scheme":"Other"},{"subitem_subject":"retention time","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors"}]},"item_type_id":"16","owner":"19","path":["1519"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-01-12"},"publish_date":"2022-01-12","publish_status":"0","recid":"15511","relation_version_is_last":true,"title":["Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors"],"weko_creator_id":"19","weko_shared_id":-1},"updated":"2023-05-15T13:02:31.213291+00:00"}