| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2009-01-19 |
| タイトル |
|
|
タイトル |
Polymorphism in pentacene thin films on SiO2 substrate |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Kakudate, Toshiyuki
Yoshimoto, Noriyuki
Saito, Yoshio
|
| 著者(機関) |
|
|
値 |
Graduate School of Frontier Materials and Functional Engineering, Iwate University |
| 著者(機関) |
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|
値 |
Graduate School of Frontier Materials and Functional Engineering, Iwate University |
| 著者(機関) |
|
|
値 |
Department of Electronics and Information Science, Kyoto Institute of Technology |
| 登録日 |
|
|
日付 |
2009-01-19 |
| 書誌情報 |
Applied Physics Letters
巻 90,
号 8,
p. 081903-1-081903-3,
発行日 2007-01-01
|
| ISSN |
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収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0003-6951 |
| Abstract |
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|
内容記述タイプ |
Other |
|
内容記述 |
The polymorphism of pentacene thin films on SiO2 substrate was investigated by grazing incidence x-ray diffractometry (GIXD). The in-plane GIXD patterns were obtained from vacuum deposited ultrathin films. By comparing the in-plane structures with thicker films, it was elucidated that ultrathin films have the same lattice constants as that of films of 100 nm thick. Consistency of determined interplanar d11 spacings of the two polymorphs suggests the epitaxial growth that bulk phase grows onto thin-film phase. Considering the obtained unit cell parameters, the mechanism of the transformation between polymorphs was discussed in terms of equilibrium shapes during nucleation process. |
| 出版者 |
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|
出版者 |
American Institute of Physics |
| 権利 |
|
|
権利情報 |
©2007 American Institute of Physics |
| DOI |
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|
関連タイプ |
isIdenticalTo |
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1063/1.2709516 |
| 著者版フラグ |
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|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
apl-v90i8p081903.pdf (211.0 kB)
