| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2010-10-18 |
| タイトル |
|
|
タイトル |
Flux pinning properties of MgB2 thin films on Ti buffered substrate prepared by molecular beam epitaxy |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Critical current density |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Ti buffer layer |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Grain boundary |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Yonekura, K.
Kugo, A.
Fujiyoshi, T.
Sueyoshi, T.
Harada, Y.
Yoshizawa, M.
Ikeda, T.
Awaji, S.
Watanabe, K.
|
| 著者(機関) |
|
|
値 |
Department of Computer Science and Electrical Engineering, Kumamoto University |
| 著者(機関) |
|
|
値 |
Department of Computer Science and Electrical Engineering, Kumamoto University |
| 著者(機関) |
|
|
値 |
Department of Computer Science and Electrical Engineering, Kumamoto University |
| 著者(機関) |
|
|
値 |
Department of Computer Science and Electrical Engineering, Kumamoto University |
| 著者(機関) |
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|
値 |
JST Satellite Iwate |
| 著者(機関) |
|
|
値 |
Department of Materials Science and Engineering, Iwate University |
| 著者(機関) |
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|
値 |
Department of Materials Science and Engineering, Iwate University |
| 著者(機関) |
|
|
値 |
Institute for Materials Research, Tohoku University |
| 著者(機関) |
|
|
値 |
Institute for Materials Research, Tohoku University |
| 登録日 |
|
|
日付 |
2010-10-18 |
| 書誌情報 |
Physica C: Superconductivity
巻 470,
号 20,
p. 1461-1464,
発行日 2010-11-01
|
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0921-4534 |
| Abstract |
|
|
内容記述タイプ |
Other |
|
内容記述 |
Transport properties of the MgB2 thin films on Si, MgO and ZnO substrates with Ti buffer layer prepared by molecular beam epitaxy were investigated to clarify effects of the substrates and the Ti buffer layer on flux pinning. The critical current density Jc of each sample shows different dependence on magnetic fields parallel to c-axis. However, the scaling analysis of the macroscopic pinning force for all the measured samples implies that the grain boundaries work as the dominant pinning centers for B//c. The pinning parameter for MgB2/Ti/Si estimated from the electric field E vs. the current density J characteristics shows the highest value among all the measured samples. This result is attributed to the high density of grain boundaries caused by the effect of both the Ti buffer and Si substrate in the growth process. Therefore, the selection of substrates and buffer layer strongly affects the flux pining properties of MgB2 thin films and plays an important role in the determination of performance for superconducting devices and wires. |
| 出版者 |
|
|
出版者 |
Elsevier B.V. |
| 権利 |
|
|
権利情報 |
Copyright © 2010 Elsevier B.V. |
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1016/j.physc.2010.05.138 |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
pcs-v470i20p1461-1464.pdf (1.0 MB)
