| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2022-08-29 |
| タイトル |
|
|
タイトル |
Silicon wafer etching rate characteristics with burst width using 150 khz band high-power burst inductively coupled plasma |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
ICP |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
etching |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
HiPIMS |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
high power |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
burst pulse |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
double probe measurement |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
CF4 |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Ar |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
KIKUCHI, Hisaki
TAKAHASHI, Katsuyuki
MUKAIGAWA, Seiji
TAKAKI, Koichi
YUKIMURA, Ken
|
| 著者(機関) |
|
|
値 |
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University |
| 著者(機関) |
|
|
値 |
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University , Agri-Innovation Center, Iwate University |
| 著者(機関) |
|
|
値 |
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University |
| 著者(機関) |
|
|
値 |
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University , Agri-Innovation Center, Iwate University |
| 著者(機関) |
|
|
値 |
Department of Systems Innovation Engineering, Faculty of Science and Engineering, Iwate University |
| 登録日 |
|
|
日付 |
2022-08-29 |
| 書誌情報 |
Micromachines
巻 12,
号 6,
p. 599,
発行日 2021-05-22
|
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
2072666X |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbon tetrafluoride (CF4) gas was used as the etching gas and injected into the vacuum chamber. The impedance was changed with time, and the coil voltage and current were changed to follow it. During the discharge, about 3 kW of power was applied. The electron temperature and plasma density were measured by the double probe method. The plasma density in the etching region was 1018–1019 m−3. The target current increased with t burst width. The etching rate of Ar discharge at burst width of 1000 µs was 0.005 µm/min. Adding CF4 into Ar, the etching rate became 0.05 µm/min, which was about 10 times higher. The etching rate increased with burst width. |
| 抄録（URL） |
|
|
表示名 |
Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma |
|
URL |
https://www.mdpi.com/2072-666X/12/6/599 |
| 出版者 |
|
|
出版者 |
MDPI |
| 権利 |
|
|
権利情報 |
© 2021 by the authors. |
| 権利URI |
|
|
権利情報 |
https://creativecommons.org/licenses/by/4.0/ |
| DOI |
|
|
関連タイプ |
isIdenticalTo |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
info:doi/10.3390/mi12060599 |
| 著者版フラグ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
mm-v12n6p599 (3.0 MB)
