Item type |
学術雑誌論文 / Journal Article(1) |
公開日 |
2022-01-12 |
タイトル |
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タイトル |
Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors |
言語 |
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言語 |
eng |
キーワード |
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主題Scheme |
Other |
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主題 |
ferroelectric |
キーワード |
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主題Scheme |
Other |
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主題 |
transistor |
キーワード |
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主題Scheme |
Other |
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主題 |
capacitor |
キーワード |
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主題Scheme |
Other |
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主題 |
buffer layer |
キーワード |
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主題Scheme |
Other |
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主題 |
capacitance |
キーワード |
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主題Scheme |
Other |
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主題 |
hysteresis |
キーワード |
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主題Scheme |
Other |
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主題 |
retention time |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
著者 |
NOH, Eun-Kyung
Boampong, Amos
KONNO, Yu
SHIBASAKI, Yuji
LEE, Jae-Hyun
CHOI, Yoonseuk
KIM, Min-Hoi
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著者(機関) |
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値 |
Department of Creative Convergence Engineering, Hanbat National University |
著者(機関) |
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値 |
Department of Electronics Engineering, Hanbat National University |
著者(機関) |
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値 |
Department of Chemistry & Biological Sciences, Faculty of Science & Engineering, Iwate University |
著者(機関) |
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値 |
Department of Chemistry & Biological Sciences, Faculty of Science & Engineering, Iwate University |
著者(機関) |
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値 |
Department of Creative Convergence Engineering, Hanbat National University |
著者(機関) |
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値 |
Department of Electronics Engineering, Hanbat National University |
著者(機関) |
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値 |
Department of Creative Convergence Engineering, Hanbat National University |
登録日 |
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日付 |
2022-01-12 |
書誌情報 |
Materials
巻 14,
号 5,
p. 1276,
発行日 2021-08-08
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ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
19961944 |
抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization–voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (Pr), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, Pr had a value close to 0 in the dynamic measurement polarization–voltage (P–V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices. |
抄録(URL) |
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表示名 |
Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors |
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URL |
https://www.mdpi.com/1996-1944/14/5/1276 |
出版者 |
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出版者 |
MDPI |
権利 |
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権利情報 |
© 2021 by the authors. |
権利URI |
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権利情報 |
https://creativecommons.org/licenses/by/4.0/ |
DOI |
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関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
info:doi/10.3390/ma14051276 |
著者版フラグ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |